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OPA2607N даташит

Функция этой детали – «Dual/ High Output/ Current-feedback Operational Amplifier».



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Номер в каталоге Производители Описание PDF
OPA2607N Burr-Brown Corporation
Burr-Brown Corporation
  Dual/ High Output/ Current-Feedback OPERATIONAL AMPLIFIER

® OPA 260 7 OPA2607 OPA 260 7 For most current data sheet and other product information, visit www.burr-brown.com Dual, High Output, Current-Feedback OPERATIONAL AMPLIFIER TM FEATURES q WIDEBAND ±12V OPERATION: 25MHz (G = +8) q UNITY GAIN STABLE: 35MHz (G = +1) q q q q q q q HIGH OUTPUT CURRENT: 250mA OUTPUT VOLTAGE SWING: ±10.5V (VS = ±12V) HIGH SLEW RATE: 600V/µs LOW SUPPLY CURRENT: 8mA/channel FLEXIBLE POWER CONTROL (SO-14) ±6V TO ±16V SUPPLY RANGE POWER PACKAGING DESCRIPTION The OPA2607 provides a hig
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Это результат поиска, начинающийся с "2607N", "OPA26"

Номер в каталоге Производители Описание PDF
24HS2607N ETC
ETC

Hybrid Stepper Motors

HYBRID STEPPING MOTORS 0.9˚ 2-PHASE 1.8˚ 3.6˚ 24HS SERIES 1.8° Key Features I High Torque I High Accuracy I Smooth Movement General Specifications Bi-polar Model Number Resistance Inductance Rated per Phase per Phase Current ohm mH A 24HS1402N 0.73 1.6 2.8 24HS1
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2KG026075JL Silan Microelectronics
Silan Microelectronics

Switching diode chip

2KG026075JL 2KG026075JL开关二极管芯片 描述 Ø 2KG026075JL是利用硅外延工艺生产的用于 塑封的开关二极管芯片; Ø 利用该芯片封装的典型成品有1N4148(高速 开关二极管); Ø 有多种厚度可选择,正面电极材料为铝,背�
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2KG026075YQ Silan Microelectronics
Silan Microelectronics

SWITCHING DIODE CHIPS

2KG026075YQ 2KG026075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG026075YQ is a high speed switching diode chip fabricated in planar technology. Ø Ø This chip can be encapsulated as 1N4148 switching diode. When the chip is selected glass package, the chip thickness is 100µm, and
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2SD2607 ROHM Semiconductor
ROHM Semiconductor

For Power amplification

w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D a t a e h S 4 t e U . m o c
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2SK2607 Toshiba Semiconductor
Toshiba Semiconductor

Silicon N Channel MOS Type Field Effect Transistor

2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2607 Chopper Regulator, DC−DC Converter and Moter Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs|= 7.0 S
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ACE2607B ACE Technology
ACE Technology

P-Channel Enhancement Mode Field Effect Transistor

ACE2607B P-Channel Enhancement Mode Field Effect Transistor Description ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits for low voltage application such as portable equip
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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