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OM2940-15SM даташитФункция этой детали – «Surface Mount 0.5 Volt L Ow Dropout Positive». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
OM2940-15SM | ETC |
SURFACE MOUNT 0.5 VOLT L OW DROPOUT POSITIVE REGULATOR OM2940-05SM OM2940-15SM OM2940-12SM
SURFACE MOUNT 0.5 VOLT LOW DROPOUT POSITIVE REGULATOR
Isolated Hermetic Surface Mount Package Three Terminal, Fixed Voltage, 1 Amp Low Dropout Voltage Regulator
FEATURES
• • • • • • Similar To Industry Standard LM2940 Dropout Voltage Typically 0.5V @ IO = 1A Output Current Up To 1A Reverse Battery Protection Internal Short Circuit Protection Isolated Hermetic Surface Mount Package
DESCRIPTION
These three terminal fixed voltage regulators are designed to provide 1.0A wit |
Это результат поиска, начинающийся с "2940", "OM2940-1" |
Номер в каталоге | Производители | Описание | |
29400 | AMIC Technology |
512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only / Boot Sector Flash Memory A29400 Series
512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only, Preliminary
Features
n 5.0V ± 10% for read and write operations n Access times: - 55/70/90 (max.) n Current: - 20 mA typical active read current - 30 mA typical program/erase current - 1 µA typical CMOS standby n Fl |
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2SK2940 | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK2940(L),2SK2940(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-563B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D
1 G 1 2 3
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2SK2940L | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK2940(L),2SK2940(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-563B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D
1 G 1 2 3
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2SK2940S | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK2940(L),2SK2940(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-563B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D
1 G 1 2 3
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A29400 | AMIC Technology |
512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory A29040 Series
512K X 8 Bit CMOS 5.0 Volt-only, Preliminary
Features
n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 (max.) n Current: - 20 mA typical active read current - 30 mA typical program/erase current - 1 µA typical CMOS standby n Flexible s |
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A29400A | AMIC |
Boot Sector Flash Memory A29400A Series
512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory
Document Title 512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory
Revision History
Rev. No.
0.0 1.0
1.1
History
Initial issue Add –U grade spec. Update ICC3, VIH, |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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