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OA90G даташитФункция этой детали – «Diode ( Rectifier )». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
OA90G | American Microsemiconductor |
Diode ( Rectifier ) |
Это результат поиска, начинающийся с "90G", "OA" |
Номер в каталоге | Производители | Описание | |
29LV800CBTC-90G | Macronix International |
MX29LV800CBTC-90G MX29LV800C T/B
FEATURES
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
• Ready/Busy# pin (RY/BY#) - Provides a hardware method of detecting program or erase operation completion • Sector protection - Hardware method to disable any combination of sectors from |
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2N5190G | ON Semiconductor |
Silicon NPN Power Transistors 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors
Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195.
Features http://onsemi.com
• Epoxy Meets UL 94 V−0 @ 0.125 in. • T |
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A2790GR | NEC |
UPA2790GR DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2790GR
SWITCHING N- AND P-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2790GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application.
8
PACKAGE DRAWING (Unit: mm)
5
N-channel 1 : Source 1 2 : Gate 1 7, |
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AK90GB40 | SanRex |
(AK90GB40/80) THYRISTOR MODULE THYRISTOR MODULE
AK90GB40/80
UL;E76102 M Power ThyristorModule AK90GB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 800V are available, and electrically isolated |
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AK90GB80 | SanRex |
(AK90GB40/80) THYRISTOR MODULE THYRISTOR MODULE
AK90GB40/80
UL;E76102 M Power ThyristorModule AK90GB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 800V are available, and electrically isolated |
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AND190GCP | Purdy Electronics Corporation |
GaP Green Light Emission AND190GCP
Ultra Bright LED Lamps: Type 1
Weight: 1.0 g Unit: mm
11.0±0.3
AND190GCP
GaP Green Light Emission T-3 Package (10 mm)
Features
• Peak wavelength (λp = 570 nm) high bright emission • All plastic mold type, clear colorless lens • Low drive current, (forward curr |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |