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O2-E2 даташит ( Datasheet PDF )


O2-E2 Datasheet PDF ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 O2-E2   Oxygen Sensor

α S O2-E2 Oxygen Sensor Figure 1 O2-E2 Schematic Diagram Technical Specification 24.6 All dimensions in millimetres (± 0.1mm) Top View Bottom View Side View PERFORMANCE Output Response time Zero current Pressure sensitivity Linearity Hysteresis Hand aspirator response µA @ 20.9% O2 t90 (s) from 20.9% to 0% O2 µA in N2 (% change of output)/(% change of pressure) @ 20kPa % O2 deviation @ 30% O 2 % O2 change after 16 cycles: 0 to 20.9% O2 % O2 change during aspiration (typical) 260 to 315 < 15 <5 < 0.1 < 0
ALPHASENSE
ALPHASENSE
O2-E2 pdf Даташит



O даташита ( переписка )

Номер в каталоге Описание Производители PDF
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4.25 Gbps Transimpedance Amplifier with AGC and RGGI

Texas Instruments
Texas Instruments
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Diode

American Microsemiconductor
American Microsemiconductor
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Triple Wideband Voltage-Feedback Operational Amplifier with Disable (Rev. G)

Texas Instruments
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Quad 2.5 Gbits/s 10 Gbits/s / and 12.5 Gbits/s Line Interface FPSC

Agere Systems
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Reflective Object Sensor

OPTEK Technologies
OPTEK Technologies
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(OTI-03x) Compatible Chip Set

Oak Technology
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OPTICALLY COUPLED ISOLATORS

ETC
ETC
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OPA2347

microPower Rail-To-Rail Operational Amplifiers (Rev. D)

Texas Instruments
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OP-400

QUAD LOW-OFFSET / LOW-POWER OPERATIONAL AMPLIFIER

Analog Devices
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Последние обновления

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Fairchild Semiconductor
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This electronic part is an UV-B Sensor.

ROITHNER
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HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
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На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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