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NX7002AKS даташитФункция этой детали – «Mosfet ( Transistor )». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NX7002AKS | NXP Semiconductors |
MOSFET ( Transistor ) NX7002AKS
60 V, dual N-channel Trench MOSFET
Rev. 1 — 1 March 2012 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching Trench MOSFET technology ESD protection
1.3 Applications
Relay driver High-speed line driver Low-side load switch Switching circuits
1.4 Quick ref |
Это результат поиска, начинающийся с "7002AKS", "NX7002" |
Номер в каталоге | Производители | Описание | |
2N7002 | Pan Jit International Inc. |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23
DESCRIPTION
• N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel |
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2N7002 | NXP Semiconductors |
N-channel Trench MOSFET DISCRETE SEMICONDUCTORS
DATA SHEET
2N7002 N-channel vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
FEATURES • Direct interface to C-MOS, |
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2N7002 | Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs Supertex inc.
2N7002
N-Channel Enhancement-Mode Vertical DMOS FETs
Features
►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►Excellent thermal stability ►►Integral source-drain di |
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2N7002 | Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VCEO
2N7002
S
D PARTMARKING DETAIL – 702 G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage |
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2N7002 | Calogic LLC |
N-Channel Enhancement-Mode MOS Transistor N-Channel Enhancement-Mode MOS Transistor
CORPORATION
2N7002
DESCRIPTION Calogic’s 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdow |
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2N7002 | Central Semiconductor Corp |
N-CHANNEL ENHANCEMENT-MODE MOSFET 2N7002
N-CHANNEL ENHANCEMENT-MODE MOSFET
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. Mar |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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