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NTP-7412S даташитФункция этой детали – «PDF». |
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Номер в каталоге | Производители | Описание | |
NTP-8230 | ![]() NeoFidelity |
Power Driver Integrated Full Digital Audio Amplifier Power Driver Integrated Full Digital Audio Amplifier
NTP-8230
NTP-8230
High Performance, High Fidelity Power Driver Integrated Full Digital Audio Amplifier
Datasheet Revision 0.1
Copyright ⓒ NeoFidelity, Inc.
Document Number: DS8230 draft ver. 0.1
Page 1
2011-01-11
Free Datasheet http:///
Power Driver Integrated Full Digital Audio Amplifier
NTP-8230
General Description
The NTP-8230 is a single chip full digital audio amplifier including power stage for stereo amplifier system. NTP-8230 is i |
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NTP10N40 | ![]() ON Semiconductor |
Power MOSFET ( Transistor ) NTP10N40, NTB10N40
Preferred Device
Advance Information Power MOSFET 10 Amps, 400 Volts
N−Channel TO−220 and D2PAK
Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features
• Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specifications • Avalanche Energy Specified
Typical Applications
• Switch Mode Power Supplies • PWM Motor Controls • Converters • Bridge Circ |
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NTP125N02R | ![]() ON Semiconductor |
Power MOSFET 125 A/ 24 V N-Channel TO-220/ D2PAK NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK
Features
• Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous • • •
Operation Low Ciss to Minimize Driver Loss Optimized Qgd and RDS(on) for Shoot−through Protection Low Gate Charge
http://onsemi.com
125 AMPERES, 24 VOLTS RDS(on) = 3.7 mW (Typ)
D
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage |
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NTP125N02R | ![]() ON Semiconductor |
Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK |
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NTP13N10 | ![]() ON Semiconductor |
Power MOSFET ( Transistor ) NTP13N10
Preferred Device
Power MOSFET
13 A, 100 V, N−Channel Enhancement−Mode TO−220
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete • • •
Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Pb−Free Package is Available
VDSS 100 V
http://onsemi.com
RDS(ON) TYP 165 mΩ @ 10 V N−Channel D ID MAX 13 A
Typical Applications
• PWM Motor Controls • Power Supplies • Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise note |
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NTP18N06 | ![]() ON Semiconductor |
Power MOSFET ( Transistor ) NTP18N06, NTB18N06 Power MOSFET
15 A, 60 V, N−Channel TO−220 & D2PAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. N−Channel
Typical Applications
D V(BR)DSS 60 V G S
http://onsemi.com
RDS(on) TYP 90 mW @ 10 V ID MAX 15 A
• • • • •
Power Supplies Converters Power Motor Controls Bridge Circuits Pb−Free Packages are Available
4 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drai |
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NTP18N06L | ![]() ON Semiconductor |
Power MOSFET ( Transistor )
NTP18N06L, NTB18N06L Power MOSFET 15 Amps, 60 Volts, Logic Level
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Typical Applications http://onsemi.com
• • • •
Power Supplies Converters Power Motor Controls Bridge Circuits
15 AMPERES 60 VOLTS RDS(on) = 100 mW
N−Channel D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain−to−Source Voltage Drain−to |
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NTP22N06 | ![]() ON Semiconductor |
Power MOSFET ( Transistor ) NTP22N06, NTB22N06
Power MOSFET 22 Amps, 60 Volts
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications
• Power Supplies • Converters • Power Motor Controls • Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MΩ) Gate−to−Source Voltage
− Continuous − Non−Repetitive (tpv1 |
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Последние обновления

Номер в каталоге | Производители | Описание | |
2N3904 | ![]() Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ![]() ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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