DataSheet26.com



NTP-7412S даташит ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
177 NTP-8230   Power Driver Integrated Full Digital Audio Amplifier

Power Driver Integrated Full Digital Audio Amplifier NTP-8230 NTP-8230 High Performance, High Fidelity Power Driver Integrated Full Digital Audio Amplifier Datasheet Revision 0.1 Copyright ⓒ NeoFidelity, Inc. Document Number: DS8230 draft ver. 0.1 Page 1 2011-01-11 Free Datasheet http:/// Power Driver Integrated Full Digital Audio Amplifier NTP-8230 General Description The NTP-8230 is a single chip full digital audio amplifier including power stage for stereo amplifier system. NTP-8230 is i
NeoFidelity
NeoFidelity
NTP-8230 pdf Даташит
176 NTP10N40   Power MOSFET

NTP10N40, NTB10N40 Preferred Device Advance Information Power MOSFET 10 Amps, 400 Volts N−Channel TO−220 and D2PAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specifications • Avalanche Energy Specified Typical Applications • Switch Mode Power Supplies • PWM Motor Controls • Converters • Bridge Circ
ON Semiconductor
ON Semiconductor
NTP10N40 pdf Даташит
175 NTP125N02R   Power MOSFET 125 A/ 24 V N-Channel TO-220/ D2PAK

NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous • • • Operation Low Ciss to Minimize Driver Loss Optimized Qgd and RDS(on) for Shoot−through Protection Low Gate Charge http://onsemi.com 125 AMPERES, 24 VOLTS RDS(on) = 3.7 mW (Typ) D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage
ON Semiconductor
ON Semiconductor
NTP125N02R pdf Даташит
174 NTP125N02R   Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK

NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous • • • Operation Low Ciss to Minimize Driver Loss Optimized Qgd and RDS(on) for Shoot−through Protection Low Gate Charge http://onsemi.com 125 AMPERES, 24 VOLTS RDS(on) = 3.7 mW (Typ) D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage
ON Semiconductor
ON Semiconductor
NTP125N02R pdf Даташит
173 NTP13N10   Power MOSFET

NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Pb−Free Package is Available VDSS 100 V http://onsemi.com RDS(ON) TYP 165 mΩ @ 10 V N−Channel D ID MAX 13 A Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise note
ON Semiconductor
ON Semiconductor
NTP13N10 pdf Даташит
172 NTP18N06   Power MOSFET

NTP18N06, NTB18N06 Power MOSFET 15 A, 60 V, N−Channel TO−220 & D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. N−Channel Typical Applications D V(BR)DSS 60 V G S http://onsemi.com RDS(on) TYP 90 mW @ 10 V ID MAX 15 A • • • • • Power Supplies Converters Power Motor Controls Bridge Circuits Pb−Free Packages are Available 4 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drai
ON Semiconductor
ON Semiconductor
NTP18N06 pdf Даташит
171 NTP18N06L   Power MOSFET

NTP18N06L, NTB18N06L Power MOSFET 15 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications http://onsemi.com • • • • Power Supplies Converters Power Motor Controls Bridge Circuits 15 AMPERES 60 VOLTS RDS(on) = 100 mW N−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to
ON Semiconductor
ON Semiconductor
NTP18N06L pdf Даташит
170 NTP22N06   Power MOSFET

NTP22N06, NTB22N06 Power MOSFET 22 Amps, 60 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv1
ON Semiconductor
ON Semiconductor
NTP22N06 pdf Даташит


Ссылка Поделиться :
[1] [2] [3] [4] [5] [6] [7] >>>.....[23] 


Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
GUVA-S12SD

This electronic part is an UV-B Sensor.

ROITHNER
ROITHNER
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
pdf
KTD1145

This electronic part is an EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z  ALL



DataSheet26.com    |   2018    |   Контакты