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NTP-7412S даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
177 NTP-8230   Power Driver Integrated Full Digital Audio Amplifier

Power Driver Integrated Full Digital Audio Amplifier NTP-8230 NTP-8230 High Performance, High Fidelity Power Driver Integrated Full Digital Audio Amplifier Datasheet Revision 0.1 Copyright ⓒ NeoFidelity, Inc. Document Number: DS8230 draft ver. 0.1 Page 1 2011-01-11 Free Datasheet http:/// Power Driver Integrated Full Digital Audio Amplifier NTP-8230 General Description The NTP-8230 is a single chip full digital audio amplifier including power stage for stereo amplifier system. NTP-8230 is i
NeoFidelity
NeoFidelity
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176 NTP10N40   Power MOSFET

NTP10N40, NTB10N40 Preferred Device Advance Information Power MOSFET 10 Amps, 400 Volts N−Channel TO−220 and D2PAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specifications • Avalanche Energy Specified Typical Applications • Switch Mode Power Supplies • PWM Motor Controls • Converters • Bridge Circ
ON Semiconductor
ON Semiconductor
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175 NTP125N02R   Power MOSFET 125 A/ 24 V N-Channel TO-220/ D2PAK

NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous • • • Operation Low Ciss to Minimize Driver Loss Optimized Qgd and RDS(on) for Shoot−through Protection Low Gate Charge http://onsemi.com 125 AMPERES, 24 VOLTS RDS(on) = 3.7 mW (Typ) D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage
ON Semiconductor
ON Semiconductor
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174 NTP125N02R   Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK

NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous • • • Operation Low Ciss to Minimize Driver Loss Optimized Qgd and RDS(on) for Shoot−through Protection Low Gate Charge http://onsemi.com 125 AMPERES, 24 VOLTS RDS(on) = 3.7 mW (Typ) D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage
ON Semiconductor
ON Semiconductor
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173 NTP13N10   Power MOSFET

NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Pb−Free Package is Available VDSS 100 V http://onsemi.com RDS(ON) TYP 165 mΩ @ 10 V N−Channel D ID MAX 13 A Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise note
ON Semiconductor
ON Semiconductor
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172 NTP18N06   Power MOSFET

NTP18N06, NTB18N06 Power MOSFET 15 A, 60 V, N−Channel TO−220 & D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. N−Channel Typical Applications D V(BR)DSS 60 V G S http://onsemi.com RDS(on) TYP 90 mW @ 10 V ID MAX 15 A • • • • • Power Supplies Converters Power Motor Controls Bridge Circuits Pb−Free Packages are Available 4 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drai
ON Semiconductor
ON Semiconductor
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171 NTP18N06L   Power MOSFET

NTP18N06L, NTB18N06L Power MOSFET 15 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications http://onsemi.com • • • • Power Supplies Converters Power Motor Controls Bridge Circuits 15 AMPERES 60 VOLTS RDS(on) = 100 mW N−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to
ON Semiconductor
ON Semiconductor
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170 NTP22N06   Power MOSFET

NTP22N06, NTB22N06 Power MOSFET 22 Amps, 60 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv1
ON Semiconductor
ON Semiconductor
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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
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HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
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На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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