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NTD5P06V даташитФункция этой детали – «Power Mosfet ( Transistor )». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NTD5P06V | ON Semiconductor |
Power MOSFET ( Transistor )
MTD5P06V
Preferred Device
Power MOSFET 5 Amps, 60 Volts
P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Avalanche |
Это результат поиска, начинающийся с "5P06V", "NTD5P" |
Номер в каталоге | Производители | Описание | |
MTD5P06V | Motorola Semiconductors |
TMOS POWER FET
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD5P06V/D
Designer's
TMOS V
™ .™
Data Sheet
MTD5P06V
Motorola Preferred Device
Power Field Effect Transistor DPAK for Surface Mount
P–Channel Enhancement–Mode Silicon Gate
TMOS V i |
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MTD5P06V | ON Semiconductor |
Power MOSFET ( Transistor )
MTD5P06V
Preferred Device
Power MOSFET 5 Amps, 60 Volts
P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters |
|
MTP5P06V | Motorola Semiconductors |
TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP5P06V/D
TMOS V Power Field Effect Transistor
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubl |
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MTP5P06V | ON Semiconductor |
Power MOSFET ( Transistor ) MTP5P06V
Preferred Device
Power MOSFET 5 Amps, 60 Volts
P−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor co |
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0505J2506P80CQT | Syfer Technology |
High Q capacitors [email protected] www.syfer.com
High Q capacitors
MS range
+44 1603 723310 +44 1603 723301
The Syfer MS range offers a very stable, High Q material system that provides excellent, low loss performance in systems below 3GHz. Available in 0402 to 3640 case sizes with various te |
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0603J2506P80CQT | Syfer Technology |
High Q capacitors [email protected] www.syfer.com
High Q capacitors
MS range
+44 1603 723310 +44 1603 723301
The Syfer MS range offers a very stable, High Q material system that provides excellent, low loss performance in systems below 3GHz. Available in 0402 to 3640 case sizes with various te |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |