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NSBC113EDXV6 даташитФункция этой детали – «Dual NPN Bias Resistor Transistors». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NSBC113EDXV6 | ON Semiconductor |
Dual NPN Bias Resistor Transistors MUN5230DW1, NSBC113EDXV6
Dual NPN Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW
NPN Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use o |
Это результат поиска, начинающийся с "113EDXV6", "NSBC113ED" |
Номер в каталоге | Производители | Описание | |
NSBA113EDXV6 | ON Semiconductor |
Dual PNP Bias Resistor Transistors MUN5130DW1, NSBA113EDXV6
Dual PNP Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW
PNP Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor ( |
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NSBA113EDXV6T1 | ON Semiconductor |
(NSBA114EDXV6T5 Series) Dual Bias Resistor Transistors NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
Preferred Devices
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two res |
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2N1136 | New Jersey Semiconductor |
SILICON PNP TRANSISTOR |
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2N1136A | New Jersey Semiconductor |
SILICON PNP TRANSISTOR |
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2N1136B | New Jersey Semiconductor |
SILICON PNP TRANSISTOR |
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2SB1136 | Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:2092B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1136/2SD1669
50V/12A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and other genral high-current switching applications.
Features
· Low-saturation collector-to-emitt |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |