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NSBA123TDP6 даташитФункция этой детали – «Dual PNP Bias Resistor Transistors». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NSBA123TDP6 | ON Semiconductor |
Dual PNP Bias Resistor Transistors NSBA123TDP6
Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW
PNP Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can |
Это результат поиска, начинающийся с "123TDP6", "NSBA123T" |
Номер в каталоге | Производители | Описание | |
NSBC123TDP6 | ON Semiconductor |
Dual NPN Bias Resistor Transistors NSBC123TDP6
Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW
NPN Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) conta |
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2SB1236 | ROHM Semiconductor |
Power Transistor Transistors
2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763
(94L-268-A56)
(96-175-C56)
276
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2SB1236A | ROHM Semiconductor |
Power Transistor ( 160V /1.5A) 2SB1275 / 2SB1236A
Transistors
Power Transistor (−160V , −1.5A)
2SB1275 / 2SB1236A
zFeatures 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD18 |
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2SB1236A | ROHM Semiconductor |
POWER TRANSISTOR 2SB1275 / 2SB1236A
Transistors
Power Transistor (−160V , −1.5A)
2SB1275 / 2SB1236A
zFeatures 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD18 |
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2SD1236 | Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors Ordering number : ENN1027A
2SB920 / 2SD1236
PNP / NPN Epitaxial Planar Silicon Transistors
2SB920 / 2SD1236
Large Current Switching Applications
Applications
• Large current switching of relay drivers, high-speed inverters, converters.
Package Dimensions
unit : mm 2010C
Fea |
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2SD1236L | Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:1796B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB920L/2SD1236L
80V/5A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Features
· Low-saturation collector-to-emit |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |