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Datasheet NE5534N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
33 | NE5531079A | 7.5V OPERATION SILICON RF POWER LDMOS FET DATA SHEET
SILICON POWER MOS FET
NE5531079A
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies a |
Renesas |
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32 | NE5531079A | SILICON POWER MOS FET SILICON POWER MOS FET
NE5531079A
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufact |
California Eastern Labs |
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31 | NE5532 | NE5532x SA5532x Dual Low-Noise Operational Amplifiers (Rev. J) |
Texas Instruments |
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30 | NE5532 | Internally-compensated dual low noise operational amplifier INTEGRATED CIRCUITS
NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier
Product specification IC11 Data Handbook 1997 Sept 29
Philips Semiconductors
Philips Semiconductors
Product specification
Internally-compensated dual low noise operational amplifier
NE/SA/SE5532/ |
Philips |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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