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NCE05N60 даташит

Функция этой детали – «N-channel Super Junction Power Mosfet».



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Номер в каталоге Производители Описание PDF
NCE05N60 NCE Power Semiconductor
NCE Power Semiconductor
  N-Channel Super Junction Power MOSFET

NCE05N60D,NCE05N60, NCE05N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requireme
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NCE05N60D NCE Power Semiconductor
NCE Power Semiconductor
  N-Channel Super Junction Power MOSFET

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NCE05N60F NCE Power Semiconductor
NCE Power Semiconductor
  N-Channel Super Junction Power MOSFET

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NCE05N60I NCE Power Semiconductor
NCE Power Semiconductor
  N-Channel Super Junction Power MOSFET

NCE05N60I,NCE05N60K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100
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NCE05N60K NCE Power Semiconductor
NCE Power Semiconductor
  N-Channel Super Junction Power MOSFET

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NCE05N60L NCE Power Semiconductor
NCE Power Semiconductor
  N-Channel Super Junction Power MOSFET

NCE05N60L N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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