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N04L1618C2A даташит электронных компонентов


N04L1618C2A Datasheet ( Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 N04L1618C2A  N04L1618C2A Даташит - NanoAmp Solutions 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04L1618C2A 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview The N04L1618C2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low po
NanoAmp Solutions
NanoAmp Solutions
PDF


N04L1618C2 даташита ( переписка )

Номер в каталоге Описание Производители PDF
N04L1618C2A  N04L1618C2A Даташит - NanoAmp Solutions 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04L1618C2A 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview The N04L1618C2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low po
NanoAmp Solutions
NanoAmp Solutions
PDF



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