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N02L163WN1A даташит электронных компонентов


N02L163WN1A Datasheet ( Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 N02L163WN1A  N02L163WN1A Даташит - NanoAmp Solutions 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02L163WN1A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16bit Overview The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device
NanoAmp Solutions
NanoAmp Solutions
PDF


N02L163WN1 даташита ( переписка )

Номер в каталоге Описание Производители PDF
N02L163WN1A  N02L163WN1A Даташит - NanoAmp Solutions 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02L163WN1A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16bit Overview The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device
NanoAmp Solutions
NanoAmp Solutions
PDF



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