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N01L83W2A даташит электронных компонентов


N01L83W2A Datasheet ( Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 N01L83W2A  N01L83W2A Даташит - ON Semiconductor 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 8 bit

N01L83W2A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit Overview The N01L83W2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01L83W2A is opt
ON Semiconductor
ON Semiconductor
PDF


N01L83W2 даташита ( переписка )

Номер в каталоге Описание Производители PDF
N01L83W2A  N01L83W2A Даташит - ON Semiconductor 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 8 bit

N01L83W2A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit Overview The N01L83W2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01L83W2A is opt
ON Semiconductor
ON Semiconductor
PDF



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