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N01L083WC2A даташит электронных компонентов


N01L083WC2A Datasheet ( Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 N01L083WC2A  N01L083WC2A Даташит - NanoAmp Solutions Ultra-low Power SRAMs

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N01L083WC2A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx8 bit Overview The N01L083WC2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design
NanoAmp Solutions
NanoAmp Solutions
PDF


N01L083WC2 даташита ( переписка )

Номер в каталоге Описание Производители PDF
N01L083WC2A  N01L083WC2A Даташит - NanoAmp Solutions Ultra-low Power SRAMs

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N01L083WC2A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx8 bit Overview The N01L083WC2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design
NanoAmp Solutions
NanoAmp Solutions
PDF



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