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MTZJ2V0 даташитФункция этой детали – «HermetICally Sealed Glass Zener Diodes». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MTZJ2V0 | Taiwan Semiconductor |
Hermetically Sealed Glass Zener Diodes MTZJ2V0 - MTZJ39
Taiwan Semiconductor Small Signal Product
500mW, Hermetically Sealed Glass Zener Diodes
FEATURES
- Zener voltage range : 2.0V to 39V - DO-34 package (JEDEC DO-204) - Through-hole device type mounting - Hermetically sealed glass - Compression bonded construction - All external surfaces are corrosion resistant and leads are readily solderable - RoHS compliant - Solder hot dip Tin (Sn) lead finish - Cathode indicated by polarity band
DO-34
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless o |
Это результат поиска, начинающийся с "2V0", "MTZJ" |
Номер в каталоге | Производители | Описание | |
2V0BS | SEMTECH |
SILICON PLANAR ZENER DIODES BS Series
SILICON PLANAR ZENER DIODES
Max. 0.45
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No.
XXX Max. 2.9
Min. 27.5
Glass Case DO-34 Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Symbol
Value
Power Dissipation
Ptot 500 1)
Junction Temperat |
|
2V0BSA | SEMTECH |
SILICON PLANAR ZENER DIODES BS Series
SILICON PLANAR ZENER DIODES
Max. 0.45
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No.
XXX Max. 2.9
Min. 27.5
Glass Case DO-34 Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Symbol
Value
Power Dissipation
Ptot 500 1)
Junction Temperat |
|
2V0BSB | SEMTECH |
SILICON PLANAR ZENER DIODES BS Series
SILICON PLANAR ZENER DIODES
Max. 0.45
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No.
XXX Max. 2.9
Min. 27.5
Glass Case DO-34 Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Symbol
Value
Power Dissipation
Ptot 500 1)
Junction Temperat |
|
ACT-S128K32V020F2C | Aeroflex Circuit Technology |
ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
Features
4 Low Power CMOS 128K x 8 SRAMs in one MCM Overall configuration as 128K x 32 s Input and Output TTL Compatible s 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order s Full Military (-55 |
|
ACT-S128K32V020F2I | Aeroflex Circuit Technology |
ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
Features
4 Low Power CMOS 128K x 8 SRAMs in one MCM Overall configuration as 128K x 32 s Input and Output TTL Compatible s 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order s Full Military (-55 |
|
ACT-S128K32V020F2M | Aeroflex Circuit Technology |
ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
Features
4 Low Power CMOS 128K x 8 SRAMs in one MCM Overall configuration as 128K x 32 s Input and Output TTL Compatible s 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order s Full Military (-55 |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |