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Datasheet MTE7410 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1MTE74105mm Red Visible Emitter

5mm Red Visible Emitter MTE7410 Features High Power Output Narrow Beam Angle High Reliability Applications Optical Switches Optical Sensors Medical Applications Maximum Ratings (Ta=25 C) Characteristic Forward Current Reverse Voltage Power Dissipation Operating Temperature St
Marktech Corporate
Marktech Corporate
data


MTE Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1MTE010N10E3N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C944E3 Issued Date : 2013.11.12 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE010N10E3 BVDSS ID RDSON(TYP) @ VGS=10V, ID=50A RDSON(TYP) @ VGS=7V, ID=20A 100V 70A 9.6mΩ 10.1mΩ Features • Low Gate Charge • Simple Drive Requirem
Cystech Electonics
Cystech Electonics
mosfet
2MTE010N10F3N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C944F3 Issued Date : 2014.06.09 Revised Date : 2015.09.04 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE010N10F3 BVDSS ID@ TC=25°C, VGS=10V (silicon limit) RDSON(TYP) @ VGS=10V, ID=50A RDSON(TYP) @ VGS=7V, ID=20A Features • Low Gate Charge • S
Cystech Electonics
Cystech Electonics
mosfet
3MTE010N10FPN-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C944FP Issued Date : 2014.01.14 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE010N10FP BVDSS ID @ VGS=10V RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 100V 35A 9.9mΩ 10.5mΩ Features • Low On Resistance • Simple D
Cystech Electonics
Cystech Electonics
mosfet
4MTE011N10RE3N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE011N10RE3 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  RoHS compliant
Cystech Electonics
Cystech Electonics
mosfet
5MTE011N10RFPN-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE011N10RFP BVDSS Features ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C  Low On Resistance RDS(ON)@VGS=10V, ID=11A  Simple Drive Require
Cystech Electonics
Cystech Electonics
mosfet
6MTE011N10RH8N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2016.07.05 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE011N10RH8 BVDSS 100V ID@VGS=10V, TC=25°C 45A ID@VGS=10V, TA=25°C 15A RDSON(TYP) VGS=10V, ID=11.5A 9.5mΩ Features • Single Drive Requirement �
Cystech Electonics
Cystech Electonics
mosfet
7MTE011N10RJ3N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE011N10RJ3 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead p
Cystech Electonics
Cystech Electonics
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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