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Datasheet MTD2N40E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MTD2N40E | TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD2N40E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET DPAK for Surface Mount
Designer's
MTD2N40E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to wit |
 Motorola Semiconductors |
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| 1 | MTD2N40E | Power MOSFET ( Transistor ) MTD2N40E
Preferred Device
Power MOSFET 2 Amps, 400 Volts
N−Channel DPAK
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage MOSFET is designed to withstand h |
 ON Semiconductor |
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