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Datasheet MTD2955V Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MTD2955V | Power MOSFET ( Transistor ) MTD2955V Power MOSFET 12 Amps, 60 Volts
P–Channel DPAK
This Power MOSFET is designed to withstand high ener gy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly |
 ON Semiconductor |
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| 2 | MTD2955V | P-Channel Enhancement Mode Field Effect Transistor MTD2955V
August 1999 DISTRIBUTION GROUP*
MTD2955V
P-Channel Enhancement Mode Field Effect Transistor
General Description
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. T |
 Fairchild Semiconductor |
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| 1 | MTD2955V | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD2955V/D
TMOS Power Field Effect Transistor DPAK for Surface Mount
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doub |
 Motorola Semiconductors |
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