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Datasheet MTD07N04E3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MTD07N04E3 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C140E3 Issued Date : 2015.12.09 Revised Date : Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTD07N04E3 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switc |  Cystech Electonics | mosfet |
MTD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MTD-160 | PHASE CONTROL THYRISTOR JOINT-STOCK COMPANY
«ELECTROVIPRYAMITEL»
P H A S E C O N T R O L T H Y R I S T O R - D I O D E
www.elvpr.ru
M O D U L E S
MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
♦ VDRM/VRRM = 400 - 1600 V ♦ IT(AV) = 160 A (TC = 85 °C) ♦ ITSM = 5 kA (TVj = 125  ELECTROVIPRYAMITEL thyristor | | |
| 2 | MTD010P03V8 | P-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTD010P03V8
Spec. No. : C391V8 Issued Date : 2016.11.24 Revised Date : Page No. : 1/10
Features
• Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package
BVDSS ID@ TC=25°C, VGS=-1 Cystech Electonics mosfet | | |
| 3 | MTD011N10RH8 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C169H8 Issued Date : 2015.11.23 Revised Date : 2016.04.27 Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTD011N10RH8
Features
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
VGS=10V, ID=11.5A RDSON(TYP)
VGS=4.5V, ID=9.5A
100V 45A 13.8A 9.2mΩ 12.8 Cystech Electonics mosfet | | |
| 4 | MTD011N10RJ3 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTD011N10RJ3
Spec. No. : C169J3 Issued Date : 2016.07.27 Revised Date : Page No. : 1/ 9
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and h Cystech Electonics mosfet | | |
| 5 | MTD011N10RQ8 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTD011N10RQ8
Spec. No. : C169Q8 Issued Date : 2015.11.30 Revised Date : 2016.05.25 Page No. : 1/9
Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-fr Cystech Electonics mosfet | | |
| 6 | MTD015P10E3 | P-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C159F3 Issued Date : 2016.11.02 Revised Date : Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTD015P10E3
BVDSS
ID @ VGS=-10V, TC=25°C
ID @ VGS=-10V, TA=25°C
RDSON(TYP) @ VGS=-10V, ID=-20A
Features
• Simple Drive Requirement • Repetitive Av Cystech Electonics mosfet | | |
| 7 | MTD030N10QJ3 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
MTD030N10QJ3
Spec. No. : C168J3 Issued Date : 2016.03.07 Revised Date : 2016.04.27 Page No. : 1/9
BVDSS ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=10A
100V 29A 23mΩ(typ)
Features
Low Gate Charge Simple Drive Requirement � Cystech Electonics mosfet | |
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