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Datasheet MTB50N06V Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MTB50N06V | TMOS POWER FET 42 AMPERES 60 VOLTS MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB50N06V/D
TMOS Power Field Effect Transistor D2PAK for Surface Mount
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than do |
 Motorola Semiconductors |
 |
| 2 | MTB50N06V | Power MOSFET ( Transistor ) MTB50N06V
Preferred Device
Power MOSFET 42 Amps, 60 Volts
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices |
 ON Semiconductor |
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| 1 | MTB50N06VL | TMOS POWER FET 42 AMPERES 60 VOLTS MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB50N06VL/D
TMOS Power Field Effect Transistor D2PAK for Surface Mount
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than d |
Motorola Semiconductors |
|
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| Número de pieza | Descripción | Fabricantes | |
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