Datasheet MT4966 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MT4966	Dual N-Channel Powe MOSFET MOS-TECH Semiconductor Co.,LTD MT4966 Dual N-Channel Powe MOSFET 100 V, 4.7 A, 102 mΩ Features Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling cap	MOS-TECH

MT4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MT4607	Dual N & P-Channel PowerTrench MOSFET MOS-TECH Semiconductor Co.,LTD MT4607 30V Complementary Power MOSFET General Description This complementary MOSFET device is produced using Mos-tech’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate c	MT Semiconductor
MT41K128M16	1.35V DDR3L SDRAM Datasheet.es 2Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 SDRAM (1.5V). Unless	Micron Technology
MT41J64M16	DDR3 SDRAM 1Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 Banks MT41J128M8 – 16 Meg x 8 x 8 Banks MT41J64M16 – 8 Meg x 16 x 8 Banks Features • • • • • • • • • • • • • • VDD = VDDQ = +1.5V ±0.075V 1.5V center-terminated push/pu	Micon

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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