Datasheet MT3S16U Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MT3S16U	Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U VHF~UHF Band Oscillator and Amplifier Applications • fT is high and current dependability is excellent. • The Cre curve is flat. :\|S21e\|2 = 4.5 dB (@ 2 V, 5 mA, 1 GHz) : NF = 2.4 dB (@ 2 V, 10 mA, f = 1 GH) MT3S16U Unit: mm Absolute	Toshiba Semiconductor

MT3S Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MT3S111TU	Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Features • Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) • High Gain: \|S21e\|2=12.5 dB (typ.) (@ f=1 GHz) 2.1±0.1 1.7±0.1 Unit: mm	Toshiba Semiconductor
MT3S35T	CMOS ST-BUS Family Multiple Rate Digital Switch MT3S35T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S35T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.4dB (@f=2GHz) High Gain:\|S21e\| =13.0dB (@f=2GHz) 2 Marking 3 Q2 1 2 TESM JEDEC �	Toshiba Semiconductor
MT3S07T	TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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