Datasheet MT3S107FS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MT3S107FS	Silicon-Germanium NPN Epitaxial Planar Type Transistor MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application FEATURES • Low Noise Figure :NF=0.85dB (@f=2GHz) • High Gain:\|S21e\|2= 13dB (@f=2GHz) Marking 3 42 2 1 +0.02 -0.04 0.6 ±0.05 0.35±0.05 0.15±0.05 Un	Toshiba Semiconductor

MT3S10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MT3S107FS	Silicon-Germanium NPN Epitaxial Planar Type Transistor MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application FEATURES • Low Noise Figure :NF=0.85dB (@f=2GHz) • High Gain:\|S21e\|2= 13dB (@f=2GHz) Marking 3 42 2 1 +0.02 -0.04 0.6 ±0.05 0.35	Toshiba Semiconductor
MT3S108FS	Silicon-Germanium NPN Epitaxial Planar Type Transistor MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noise Amplifier Application FEATURES • Low Noise Figure :NF=0.9dB (@f=2GHz) • High Gain:\|S21e\|2=11.5dB (@f=2GHz) Marking 3 43 2 1 +0.02 -0.04 0.6 ±0.05 0	Toshiba Semiconductor
MT3S106FS	Silicon-Germanium NPN Epitaxial Planar Type Transistor MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application FEATURES • Low Noise Figure :NF=1.2dB (@f=2GHz) • High Gain:\|S21e\|2=10dB (@f=2GHz) Marking 3 41 2 1 +0.02 -0.04 0.6 ±0.05 0.3	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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