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MSC82040 даташитФункция этой детали – «Rf & MICrowave Transistors General Purpose Amplifier ApplICations». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MSC82040 | STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS MSC82040
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
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EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY ∞:1 @ RATED CONDITIONS ft 1.6 GHz TYPICAL NOISE FIGURE 15.5 dB @ 2 GHz POUT = 27 dBm MIN. @ 1.0 GHz
.230 4L STUD (S027) hermetically sealed ORDER CODE MSC82040 BRANDING 82040
PIN CONNECTION
DESCRIPTION The MSC82040 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/go |
Это результат поиска, начинающийся с "82040", "MSC82" |
Номер в каталоге | Производители | Описание | |
CXP82040 | Sony Corporation |
CMOS 8-bit Single Chip Microcomputer CXP82032/82040/82052/82060
CMOS 8-bit Single Chip Microcomputer
Description The CXP82032/82040/82052/82060 is a CMOS 8bit single chip microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time-base timer, capture timer/counter, fluorescent |
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SNC82040 | SONiX |
12-Channel MIDI/Speech Controller SNC82040
12-Channel MIDI/Speech Controller
================== CONTENTS =================
1 2 3 4 5 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. 5.7. 5.8. 5.9. 5.10. 6 7 8 INTRODUCTION............................................................................................................... |
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MSC82001 | STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS MSC82001
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
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EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 1.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz
.250 2LFL (S010) hermetically |
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MSC82003 | STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS MSC82003
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . . .
EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC ® PACKAGE P OUT = 3.0 W MIN. WITH 7.8 dB GAIN @ 2.0 GHz
.250 2LFL (S010) hermetically |
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MSC82005 | STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS MSC82005
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . . .
EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC ® PACKAGE P OUT = 5.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz
.250 2LFL (S010) hermetically |
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MSC82010 | STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS MSC82010
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . .
EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 10 W MIN. WITH 5.2 dB GAIN @ 2.0 GHz
.250 2LFL (S010) hermetically sealed ORDER CODE MSC82010 BRANDI |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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