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MSC82003 даташит

Функция этой детали – «Rf & MICrowave Transistors General Purpose Amplifier ApplICations».



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Номер в каталоге Производители Описание PDF
MSC82003 STMicroelectronics
STMicroelectronics
  RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC82003 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC ® PACKAGE P OUT = 3.0 W MIN. WITH 7.8 dB GAIN @ 2.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC82003 BRANDING 82003 PIN CONNECTION DESCRIPTION The MSC82003 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gol
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Это результат поиска, начинающийся с "82003", "MSC82"

Номер в каталоге Производители Описание PDF
MSC82001 STMicroelectronics
STMicroelectronics

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC82001 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 1.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz .250 2LFL (S010) hermetically
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MSC82005 STMicroelectronics
STMicroelectronics

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC82005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC ® PACKAGE P OUT = 5.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz .250 2LFL (S010) hermetically
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MSC82010 STMicroelectronics
STMicroelectronics

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC82010 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 10 W MIN. WITH 5.2 dB GAIN @ 2.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC82010 BRANDI
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MSC82040 STMicroelectronics
STMicroelectronics

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC82040 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY ∞:1 @ RATED CONDITIONS ft 1.6 GHz TYPICAL NOISE FIGURE 15.5 dB @ 2 GHz POUT = 27 dBm MIN. @ 1.0 GHz .230 4L STUD (S
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MSC8205G MORESEMI
MORESEMI

Dual N-Channel Enhancement Mode Power MOS FET

MSC8205G 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Lead Free A
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MSC8205S MORESEMI
MORESEMI

Dual N-Channel Enhancement Mode Power MOS FET

MSC8205S 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application �
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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