Datasheet MSC4963W Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MSC4963W	Dual P-Channel Enhancement Mode Power MOS FET MSC4963W -20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface Mount Package Lead Free Application ●	MORESEMI

MSC49 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MSC49N02X	40V N-Channel MOSFETs MSC49N02X 40V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withsta	Bruckewell
MSC49N60X	40V N-Channel MOSFETs MSC49N60X 40V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withsta	Bruckewell
MSC4963W	Dual P-Channel Enhancement Mode Power MOS FET MSC4963W -20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface Mount Package Lead Fr	MORESEMI

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Número de pieza	Descripción	Fabricantes	PDF
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