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Datasheet MSC0205W Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 MSC0205W   Dual N-Channel Enhancement Mode Power MOS FET

MSC0205W 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Lead Free Application ● Power swi
MORESEMI
MORESEMI
datasheet MSC0205W pdf

MSC02 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
MSC0206W

Dual N-Channel Enhancement Mode Power MOS FET

MSC0206W 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Lead Free Appli
MORESEMI
MORESEMI
datasheet pdf - MORESEMI
MSC0203S

N and P-Channel Enhancement Mode Power MOS FET

MSC0203S N and P-Channel Enhancement Mode Power MOS FET General Features ● N-Channel VDS = 20V,ID = 3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V ● P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V Lead Free ● High po
MORESEMI
MORESEMI
datasheet pdf - MORESEMI
MSC0211GE

Dual N-Channel Enhancement Mode Power MOS FET

MSC0211GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount
MORESEMI
MORESEMI
datasheet pdf - MORESEMI


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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