MS1307 даташит ( Даташиты, Даташиты ) |
| Номер | Номер в каталоге | Описание | Производители | |
| 6 | MS1329 | RF & MICROWAVE TRANSISTORS RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
Features
• 150 MHz • 28 VOLTS • POUT = 60W • GP = 7.0 dB MINIMUM • COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 – 136 MHz and 28 V Class C ground station transmitters. Emitter ballast resistors and gold metalitzation provide optimum VSWR capability.
MS1329
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector- Base V |
 Advanced Power Technology |
 |
| 5 | MS1336 | RF & MICROWAVE TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Features
• 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.
MS1336
ABSOLUTE MAXIMUM R |
Advanced Power Technology |
|
| 4 | MS1337 | RF & MICROWAVE TRANSISTORS RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Features
• 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.
MS1337
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO VCEO VCES VEBO
IC
Collector-Base Voltage Co |
Advanced Power Technology |
|
| 3 | MS13N30 | N-Channel 30-V (D-S) MOSFET MS13N30
N-Channel 30-V (D-S) MOSFET
Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones Features • Low rDS(on) trench technology • Fast switching speed • Low thermal impedance |
 Bruckewell |
|
| 2 | MS13N50 | N-Channel MOSFET MS13N50
500V N-Channel MOSFET
Description The MS13N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • 100% EAS Test • Extended Safe Operating Area • RoHS compliant package Application • El |
Bruckewell |
|
| 1 | MS13P21 | P-Channel MOSFET MS13P21
P-Channel 20-V (D-S) MOSFET
Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SC70-3 saves boar |
Bruckewell |
|
Ссылка Поделиться :
Последние обновления
| Номер в каталоге | Описание | Производители | |
| CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required. |
 Fairchild Semiconductor |
 |
| GUVA-S12SD | This electronic part is an UV-B Sensor. |
 ROITHNER |
|
| HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array). |
 HYDIS |
|
| KTD1145 | This electronic part is an EPITAXIAL PLANAR NPN TRANSISTOR. |
 KEC |
|
|
На первой странице data sheets приводятся: |
|
Index : 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z ALL |
DataSheet26.com | 2018 | Контакты |