Datasheet MRFG35003N6T1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRFG35003N6T1	POWER FET GaAs PHEMT Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 5, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Custome	Freescale Semiconductor

MRFG35003N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRFG35003NT1	RF Reference Design Library Gallium Arsenide PHEMT Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT RF Power Field Effect Transistors Device Characteristics (From Device Data Sheet) Designed for WL	Freescale Semiconductor
MRFG35003N6T1	POWER FET GaAs PHEMT Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 5, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use	Freescale Semiconductor

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