|
|
Datasheet MRFG35003MT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MRFG35003MT1 | The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRFG35003MT1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Dev |
 Motorola Semiconductors |
 |
| 1 | MRFG35003MT1 | RF Reference Design Library Gallium Arsenide PHEMT
Freescale Semiconductor Technical Data
Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005
RF Reference Design Library
Gallium Arsenide PHEMT
RF Power Field Effect Transistors
Device Characteristics (From Device Data Sheet) Designed for WLL/MMDS/BWA or UMTS d |
 Freescale Semiconductor |
|
| Esta página es del resultado de búsqueda del MRFG35003MT1. Si pulsa el resultado de búsqueda de MRFG35003MT1 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |