Datasheet MRF8P23080HSR3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF8P23080HSR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 0, 5/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class	Freescale Semiconductor

MRF8P23080H Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF8P23080HSR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 0, 5/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz.	Freescale Semiconductor
MRF8P23080HR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 0, 5/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz.	Freescale Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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