Datasheet MRF8P20160HR3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF8P20160HR3	RF Power Field Effect Transistors DataSheet.in Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C fo	Motorola Semiconductor Products

MRF8P20160 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF8P20160HSR3	RF Power Field Effect Transistors DataSheet.in Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Cla	Motorola Semiconductor Products
MRF8P20160HSR3	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: MRF8P20160H Rev. 0, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in C	Freescale Semiconductor
MRF8P20160HR3	RF Power Field Effect Transistors DataSheet.in Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Cla	Motorola Semiconductor Products

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Número de pieza	Descripción	Fabricantes	PDF
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