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MRF6S9060 даташитФункция этой детали – «Rf Power Field Effect Transistors». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MRF6S9060 | Freescale Semiconductor |
RF Power Field Effect Transistors Freescale Semiconductor Technical Data
Document Number: MRF6S9060 Rev. 1, 6/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = |
Это результат поиска, начинающийся с "6S9060", "MRF6S9" |
Номер в каталоге | Производители | Описание | |
MRFE6S9060NR1 | Freescale Semiconductor |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Freescale Semiconductor Technical Data
Document Number: MRFE6S9060N Rev. 1, 10/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz |
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MRF6S9045 | Freescale Semiconductor |
RF Power Field Effect Transistors Freescale Semiconductor Technical Data
Document Number: MRF6S9045 Rev. 1, 6/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and br |
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MRF6S9125MBR1 | Freescale Semiconductor |
RF Power Field Effect Transistors
Freescale Semiconductor Technical Data
Document Number: MRF6S9125 Rev. 1, 7/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. |
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MRF6S9125MR1 | Freescale Semiconductor |
RF Power Field Effect Transistors
Freescale Semiconductor Technical Data
Document Number: MRF6S9125 Rev. 1, 7/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. |
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MRF6S9125NBR1 | Freescale Semiconductor |
RF Power Field Effect Transistors
Freescale Semiconductor Technical Data
Document Number: MRF6S9125 Rev. 1, 7/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. |
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MRF6S9125NR1 | Freescale Semiconductor |
RF Power Field Effect Transistors
Freescale Semiconductor Technical Data
Document Number: MRF6S9125 Rev. 1, 7/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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