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MRF6S9060 даташит

Функция этой детали – «Rf Power Field Effect Transistors».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
MRF6S9060 Freescale Semiconductor
Freescale Semiconductor
  RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S9060 Rev. 1, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout =
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Это результат поиска, начинающийся с "6S9060", "MRF6S9"

Номер в каталоге Производители Описание PDF
MRFE6S9060NR1 Freescale Semiconductor
Freescale Semiconductor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz
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MRF6S9045 Freescale Semiconductor
Freescale Semiconductor

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S9045 Rev. 1, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and br
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MRF6S9125MBR1 Freescale Semiconductor
Freescale Semiconductor

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
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MRF6S9125MR1 Freescale Semiconductor
Freescale Semiconductor

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
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MRF6S9125NBR1 Freescale Semiconductor
Freescale Semiconductor

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
pdf
MRF6S9125NR1 Freescale Semiconductor
Freescale Semiconductor

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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