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даташит MRF6S9045 IC Даташиты PDF

Номер в каталоге Описание Производители PDF
1 MRF6S9045   RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S9045 Rev. 1, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 350 mA, Pout =
Freescale Semiconductor
Freescale Semiconductor
pdf



MRF6S даташита ( переписка )

Номер в каталоге Описание Производители PDF
MRF6S9125MR1

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
Freescale Semiconductor
Freescale Semiconductor
pdf
MRF6S19120HR3

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA a
Freescale Semiconductor
Freescale Semiconductor
pdf
MRF6S21100NR1

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 2, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suita
Freescale Semiconductor
Freescale Semiconductor
pdf
MRF6S19100NBR1

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S19100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA a
Freescale Semiconductor
Freescale Semiconductor
pdf
MRF6S21100HSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suit
Freescale Semiconductor
Freescale Semiconductor
pdf
MRF6S19100HR3

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA an
Freescale Semiconductor
Freescale Semiconductor
pdf
MRF6S27085HR3

N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA an
Freescale Semiconductor
Freescale Semiconductor
pdf
MRF6S21060NR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CD
Freescale Semiconductor
Freescale Semiconductor
pdf
MRF6S19060NBR1

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suit
Freescale Semiconductor
Freescale Semiconductor
pdf
MRF6S27050HSR3

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable
Freescale Semiconductor
Freescale Semiconductor
pdf


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Номер в каталоге Описание Производители PDF
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The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.

Fairchild Semiconductor
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HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.

HYDIS
HYDIS
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На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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