Datasheet MRF6S27085HR3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF6S27085HR3	N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier ampli	Freescale Semiconductor

MRF6S27085 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF6S27085HSR3	N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA an	Freescale Semiconductor
MRF6S27085HR3	N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA an	Freescale Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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