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даташит MRF6S27050HSR3 IC Даташиты PDF |
| Номер в каталоге | Описание | Производители | ||
| 2 | MRF6S27050HSR3 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data
Document Number: MRF6S27050H Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 7 Watts Avg., f = 2615 MHz, Channel Bandwidth = 3.84 MHz. PAR = 8. |
 Freescale Semiconductor |
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| 1 | MRF6S27050HSR3 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data
Document Number: MRF6S27050H Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 7 Watts Avg., f = 2615 MHz, Channel Bandwidth = 3.84 MHz. PAR = 8. |
Freescale Semiconductor |
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