Datasheet MRF6S24140HR3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF6S24140HR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial,	Freescale Semiconductor

MRF6S24140 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF6S24140HSR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for large - signal output applications at 2450 MHz. Device is suitable fo	Freescale Semiconductor
MRF6S24140HR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for large - signal output applications at 2450 MHz. Device is suitable fo	Freescale Semiconductor

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