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Datasheet MRF6S19100NBR1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | MRF6S19100NBR1 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data
Document Number: MRF6S19100N Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier ampl |
Freescale Semiconductor |
MRF6S19100N Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
MRF6S19100NR1 | RF Power Field Effect Transistors |
Freescale Semiconductor |
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MRF6S19100NBR1 | RF Power Field Effect Transistors |
Freescale Semiconductor |
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