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MRF650 даташит ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 MRF650   RF POWER TRANSISTOR NPN SILICON

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Mat
Motorola
Motorola
MRF650 pdf Даташит



MR даташита ( переписка )

Номер в каталоге Описание Производители PDF
MRF230

BJT

New Jersey Semiconductor
New Jersey Semiconductor
pdf
MRF5S19130R3

N-Channel Enhancement-Mode Lateral MOSFETs

Motorola
Motorola
pdf
MR2404FR

25 AMP SOFT RECOVERY FAST SWITCHING TAB MOUNTED DIODES

DIOTEC
DIOTEC
pdf
MRF9030MBR1

RF Power Field Effect Transistors

Freescale Semiconductor
Freescale Semiconductor
pdf
MRF6522-60

Trans RF MOSFET N-CH 60V 7A 3-Pin Case 360B-04

New Jersey Semiconductor
New Jersey Semiconductor
pdf
MR2512

Diode 1.2KV 25A Automotive 2-Pin MR

New Jersey Semiconductor
New Jersey Semiconductor
pdf
MR850

(MR850 - MR858) FAST RECOVERY RECTIFIERS

JGD
JGD
pdf
MRF9210R3

RF Power Field Effect Transistor

Motorola
Motorola
pdf
MRF6S9125MBR1

RF Power Field Effect Transistors

Freescale Semiconductor
Freescale Semiconductor
pdf
MR27V3252J

2M-Word x 16-Bit or 4M-Word x 8-Bit OTP

OKI
OKI
pdf


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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
GUVA-S12SD

This electronic part is an UV-B Sensor.

ROITHNER
ROITHNER
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
pdf
KTD1145

This electronic part is an EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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