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MRF650 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
1 MRF650   RF POWER TRANSISTOR NPN SILICON

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Mat
Motorola
Motorola
pdf



MR даташита ( переписка )

Номер в каталоге Описание Производители PDF
MRF421

Trans GP BJT NPN 20V 20A 4-Pin Case 211-11

New Jersey Semiconductor
New Jersey Semiconductor
pdf
MRF6V10250HSR3

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Freescale Semiconductor
pdf
MR856

FAST SWITCHING PLASTIC RECTIFIERS

CDIL
CDIL
pdf
MRFIC1801

1.8 GHz TRANSMIT/RECEIVE ANTENNA SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT

Motorola
Motorola
pdf
MR16R1624AF0

(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die

Samsung semiconductor
Samsung semiconductor
pdf
MRAL1720-9

NPN SILICON RF POWER TRANSISTOR

ASI
ASI
pdf
MRF21060SR3

RF Power Field Effect Transistors

Motorola
Motorola
pdf
MR2401R

25 AMP TAB MOUNTED BUTTON DIODES

DIOTEC
DIOTEC
pdf
MR751

(MR750 - MR7510) 6 Amp Rectifier

MCC
MCC
pdf
MRF10501

MICROWAVE POWER TRANSISTORS

Motorola
Motorola
pdf



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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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