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Datasheet MRF581 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 20 | MRF581 | NPN SILICON RF TRANSISTOR MRF581
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The MRF581 is Designed for
High current low Power Amplifier Applications up to 1.0 GHz.
PACKAGE STYLE
Dim. Are in mm
FEATURES:
• Low Noise Figure • Low Intermodulation Distortion • High Gain • Omnigold™ Metalization System
MAXIMUM RATINGS
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 ASI |
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| 19 | MRF581 | HIGH FREQUENCY TRANSISTOR MRF580
MAXIMUM RATINGS
Rating
Symbol MRF581 MRF581
Unit
Collector-Emitter Voltage
vCEO
18
18 Vdc
Collector-Base Voltage
vCBO
36
36 Vdc
Emitter-Base Voltage
—Collector Current Continuous
vEBO
"C
2.5 200
2.5 Vdc 200 mAdc
Total Device Dissipation
@TC = 50°C(1)
Derate above Tq = 50° |
 Motorola Semiconductors |
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| 18 | MRF581 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF581 MRF581G MRF581A MRF581AG
*G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package
Macro X
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 Microsemi |
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| 17 | MRF581 | RF and Microwave Discrete Low Power Power Transistors 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MRF581/MRF581A
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective |
 Advanced Power Technology |
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