Datasheet MRF3010 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF3010	LATERAL N-CHANNEL BROADBAND RF POWER MOSFET MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF3010/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB, CW amplifier applications. D • Guaranteed Perf	Motorola Semiconductors

MRF3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF317	The RF Line NPN Silicon RF Power Transistor SEMICONDUCTOR TECHNICAL DATA Order this document by MRF317/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 1	Tyco Electronics
MRF315	NPN Silicon RF Power Transistor ELEFLOW TECHNOLOGIES www.eleflow.com MRF315 NPN Silicon RF power transistor MRF315 Description: MRF315 is designed for class C VHF mobile radio power amplifier applications operating. Maximum Ratings at TU = 25 Symbol Test Conditions IC=10 mA IC=30 mA IE	Eleflow Tech
MRF373	The RF MOSFET Line RF Power Field Effect Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates. O	Motorola Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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