Datasheet MRF18085BR3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF18085BR3	RF Power Field Effect Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18085B/D The RF MOSFET Line RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amp	Motorola Semiconductors

MRF18085 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF18085A	RF Power Field Effect Transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18085A/D Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB fo	Motorola Semiconductors
MRF18085ALSR3	RF Power Field Effect Transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18085A/D Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB fo	Motorola Semiconductors
MRF18085ALSR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Freescale Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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