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MRF18030BR3 даташитФункция этой детали – «The Rf Mosfet Line Rf Power Field Effect». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MRF18030BR3 | Motorola Semiconductors |
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF18030B/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 – 1990 MHz. • Typical GSM Performance: Power Gain – 14 dB (Typ) @ 30 Watts Efficiency – 50% (Typ) @ 30 Watts • Internally Matched, Cont |
Это результат поиска, начинающийся с "18030BR3", "MRF18030" |
Номер в каталоге | Производители | Описание | |
MRF18030ALR3 | Motorola Semiconductors |
RF Power Field Effect Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF18030A/D
The RF MOSFET Line
RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3
Designed for GSM and EDGE base station applic |
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MRF18030ALSR3 | Motorola Semiconductors |
RF Power Field Effect Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF18030A/D
The RF MOSFET Line
RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3
Designed for GSM and EDGE base station applic |
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MRF18030BLR3 | Freescale Semiconductor |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor Technical Data
Document Number: MRF18030B Rev. 7, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Su |
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MRF18030BLSR3 | Freescale Semiconductor |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor Technical Data
Document Number: MRF18030B Rev. 7, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Su |
|
MRF18030BSR3 | Motorola Semiconductors |
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF18030B/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2 |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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