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даташит MR1721 IC Даташиты PDF |
| Номер в каталоге | Описание | Производители | ||
| 1 | MR1721 | Partial Resonance PS IC Vol.02-05-e / June2002
MR1000 Series
Standby-compatible Partial Resonance Power Supply IC Modules
Masaaki Hayashi - Electronic Device Div.Group Advanced Power Products Div. Device Design Dept. Assistant Manager (Joined the company in 1989)
1
Introduction
Energy conservation guidelines from the Ministry of Economy, Trade and Industry’s Agency of Natural Resources and Energy place considerable emphasis on reducing standby power consumption of domestic electrical appliances. These guidelines design |
 Shindengen Electric |
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MR даташита ( переписка ) |
| Номер в каталоге | Описание | Производители | |
| MRF8S18210WHSR3 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data
Document Number: MRF8S18210WHS Rev. 0, 4/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from1805 MHz to 1995 MHz. Can be used in Class AB an |
 Freescale Semiconductor |
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| MRFG35003N6T1 | POWER FET GaAs PHEMT Freescale Semiconductor Technical Data
Document Number: MRFG35003N6 Rev. 5, 1/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use |
Freescale Semiconductor |
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| MRF18030BR3 | THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF18030B/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2 |
 Motorola Semiconductors |
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| MRF497 | Trans GP BJT NPN 18V 20A 4-Pin Case 211-11 |
 New Jersey Semiconductor |
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| MR314 | Wirewound Resistor www.vishay.com
MR300 Series
Vishay Mills
Wirewound Resistor, Ultra Precision, Epoxy Molded, Axial Lead
FEATURES
• Resistance values up to 6 M
• Resistance tolerances down to ± 0.01 %
• Temperature coefficients down to 2 ppm/°C
• Material categorization: For defini |
 Vishay |
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| MRAL2023-12 | NPN SILICON RF POWER TRANSISTOR MRAL2023-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRAL2023-12 is a Common Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links.
PACKAGE STYLE .250 2L FLG (C)
FEATURES INCLUDE:
• Gold Metalization • Emitter Ball |
 ASI |
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| MRFE6P3300HR5 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Freescale Semiconductor Technical Data
Document Number: MRFE6P3300H Rev. 0, 5/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain a |
Freescale Semiconductor |
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| MRF450 | Trans GP BJT NPN 25V 20A 4-Pin Case 211-11 |
New Jersey Semiconductor |
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| MRF5S9100NBR1 | SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs Freescale Semiconductor Technical Data
Document Number: MRF5S9100N Rev. 5, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and b |
Freescale Semiconductor |
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| MR816 | DIODE FAST RECOVERY RECTIFIER 1KV 2A 2-PIN DO-41 |
New Jersey Semiconductor |
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Последние обновления
| Номер в каталоге | Описание | Производители | |
| CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. |
 Fairchild Semiconductor |
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| HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. |
 HYDIS |
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