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даташит MR1721 IC Даташиты PDF

Номер в каталоге Описание Производители PDF
1 MR1721   Partial Resonance PS IC

Vol.02-05-e / June2002 MR1000 Series Standby-compatible Partial Resonance Power Supply IC Modules Masaaki Hayashi - Electronic Device Div.Group Advanced Power Products Div. Device Design Dept. Assistant Manager (Joined the company in 1989) 1 Introduction Energy conservation guidelines from the Ministry of Economy, Trade and Industry’s Agency of Natural Resources and Energy place considerable emphasis on reducing standby power consumption of domestic electrical appliances. These guidelines design
Shindengen Electric
Shindengen Electric
pdf



MR даташита ( переписка )

Номер в каталоге Описание Производители PDF
MRF8S18210WHSR3

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from1805 MHz to 1995 MHz. Can be used in Class AB an
Freescale Semiconductor
Freescale Semiconductor
pdf
MRFG35003N6T1

POWER FET GaAs PHEMT

Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 5, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use
Freescale Semiconductor
Freescale Semiconductor
pdf
MRF18030BR3

THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18030B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2
Motorola Semiconductors
Motorola Semiconductors
pdf
MRF497

Trans GP BJT NPN 18V 20A 4-Pin Case 211-11

New Jersey Semiconductor
New Jersey Semiconductor
pdf
MR314

Wirewound Resistor

www.vishay.com MR300 Series Vishay Mills Wirewound Resistor, Ultra Precision, Epoxy Molded, Axial Lead FEATURES • Resistance values up to 6 M • Resistance tolerances down to ± 0.01 % • Temperature coefficients down to 2 ppm/°C • Material categorization: For defini
Vishay
Vishay
pdf
MRAL2023-12

NPN SILICON RF POWER TRANSISTOR

MRAL2023-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRAL2023-12 is a Common Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links. PACKAGE STYLE .250 2L FLG (C) FEATURES INCLUDE: • Gold Metalization • Emitter Ball
ASI
ASI
pdf
MRFE6P3300HR5

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain a
Freescale Semiconductor
Freescale Semiconductor
pdf
MRF450

Trans GP BJT NPN 25V 20A 4-Pin Case 211-11

New Jersey Semiconductor
New Jersey Semiconductor
pdf
MRF5S9100NBR1

SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and b
Freescale Semiconductor
Freescale Semiconductor
pdf
MR816

DIODE FAST RECOVERY RECTIFIER 1KV 2A 2-PIN DO-41

New Jersey Semiconductor
New Jersey Semiconductor
pdf



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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.

HYDIS
HYDIS
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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