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даташит MR1721 IC Даташиты PDF |
Номер в каталоге | Описание | Производители | ||
1 | MR1721 | Partial Resonance PS IC Vol.02-05-e / June2002
MR1000 Series
Standby-compatible Partial Resonance Power Supply IC Modules
Masaaki Hayashi - Electronic Device Div.Group Advanced Power Products Div. Device Design Dept. Assistant Manager (Joined the company in 1989)
1
Introduction
Energy conservation guidelines from the Ministry of Economy, Trade and Industry’s Agency of Natural Resources and Energy place considerable emphasis on reducing standby power consumption of domestic electrical appliances. These guidelines design |
![]() Shindengen Electric |
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MR даташита ( переписка ) |
Номер в каталоге | Описание | Производители | |
MR828 | Fast silicon rectifier diodes MR 820...MR 828
Axial lead diode
Fast silicon rectifier diodes
MR 820...MR 828 Forward Current: 5 A Reverse Voltage: 50 to 1000 V
Features
!"#$
Mechanical Data
% &'( )* + $
,-
. |
![]() Semikron |
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MRF5S19130HR3 | CDMA and multicarrier amplifier applications
Freescale Semiconductor Technical Data
Document Number: MRF5S19130H Rev. 2, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Sui |
![]() Freescale Semiconductor |
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MRC370Vxx | MOTOR RUN AC METALLIZED MOTOR RUN AC METALLIZED
MRC SERIES
The MRC series is a range of AC metallized capacitors. These capacitors are most often used in motor run, HVAC, lighting, and power supply applications.
W
FEATURES:
• • • • • • .25” 4−Way Quick Connect terminals Pressure activat |
![]() NTE Electronics |
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MRF6V3090NR5 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data
Document Number: MRF6V3090N Rev. 0, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 M |
![]() Motorola Semiconductor |
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MR2402FR | 24A FAST RECOVERY RECTIFIER MR2400FR-MR2410FR
High-reliability discrete products and engineering services since 1977
24A FAST RECOVERY RECTIFIER
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoH |
![]() Digitron Semiconductors |
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MRY1518BTA | 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch AnaSem
安纳森
Analog Semiconductor IC
MRY1518B Series
1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch
(IMPORTANT: Please check the last page for Genuine Product Labeling) Rev. E13-01
Website: Tel: Email:
www.anasemi.com +852-3590-8442 sa |
![]() AnaSem |
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MRF342 | Trans GP BJT NPN 30V 0.4A T/R |
![]() New Jersey Semiconductor |
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MR820 | Fast silicon rectifier diodes MR 820...MR 828
Axial lead diode
Fast silicon rectifier diodes
MR 820...MR 828 Forward Current: 5 A Reverse Voltage: 50 to 1000 V
Features
!"#$
Mechanical Data
% &'( )* + $
,-
. |
![]() Semikron |
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MRF5812G | Bipolar Junction Transistor MRF5812, R1, R2 MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package
SO-8
R1 suffix–Tape and Reel, 500 units R2 suf |
![]() Advanced Power Technology |
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MRF6S9045 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data
Document Number: MRF6S9045 Rev. 1, 6/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and br |
![]() Freescale Semiconductor |
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Номер в каталоге | Описание | Производители | |
CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. |
![]() Fairchild Semiconductor |
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HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. |
![]() HYDIS |
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