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MPSA44 даташитФункция этой детали – «High Voltage Transistor». |
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Номер в каталоге | Производители | Описание | |
MPSA44 | Weitron Technology |
High-Voltage NPN Transistors MPSA44
High-Voltage NPN Transistors
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation T A =25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj
Value 400 400 5.0 200 0.625 150 -55 to +150
Unit Vdc Vdc Vdc mAdc W C C
Tstg
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) C |
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MPSA44 | Unisonic Technologies |
(MPSA44 / MPSA45) HIGH VOLTAGE TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
MPSA44/45
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
* Collector-Emitter Voltage: * VCEO=400V (UTC MPSA44) * VCEO=350V (UTC MPSA45) * Collector Current up to 300mA
1 SOT-89
1 TO-252
1 TO-92
1 TO-92NL
1 TO-126
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
-
MPSA44G-AB3-R
SOT-89
MPSA44L-AN3-R
MPSA44G-TN3-R
TO-252
MPSA44L-T60-K
MPSA44G-T60-K
TO-126
MPSA44L-T92-B
MPSA44G-T92-B
TO-92
MPSA44L-T92-K
MPSA44G-T92-K
TO-92
MPSA4 |
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MPSA44 | TAITRON |
Small Signal High Voltage Transistors Small Signal High Voltage Transistors (NPN)
MPSA44/MPSA45
Small Signal High Voltage Transistors (NPN)
Features
• This device is designed for application as a video output to drive color CRT and other high voltage applications.
• RoHS Compliance
Mechanical Data
Case: Terminals:
Weight:
TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram
TO-92
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MPSA44 MPSA45
VCEO
Collector-Emitter Voltage
400 350
VCBO
Collecto |
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MPSA44 | ON Semiconductor |
High Voltage Transistor MPSA44
Preferred Device
High Voltage Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
400 Vdc
500 Vdc
6.0 Vdc
300 mAdc
625 mW 5.0 mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 W 12 mW/°C
Operating and Storage Junction Temperature Range |
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MPSA44 | NXP Semiconductors |
NPN high-voltage transistor DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
MPSA44 NPN high-voltage transistor
Product data sheet Supersedes data of 1999 Apr 27
2004 Oct 11
NXP Semiconductors
NPN high-voltage transistor
Product data sheet
MPSA44
FEATURES • Low current (max. 300 mA) • High voltage (max. 400 V).
APPLICATIONS • Telecommunication applications.
DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package.
PINNING
PIN 1 2 3
collector base emitter
DESCRIPTION
handbook, halfpage1 2 3
2
MAM279
1 3
F |
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MPSA44 | NTE |
Silicon NPN Transistor MPSA44 Silicon NPN Transistor
High Voltage
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Col |
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MPSA44 | Multicomp |
High Voltage Transistor MPSA44
High Voltage Transistor
Features:
• Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes.
• NPN epitaxial planar silicon transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,
Low Saturation Voltages and Low Capacitance.
TO-92 Plastic Package
Dimensions Minimum Maximum
A 4.32 5.33
B 4.45 5.20
C 3.18 4.19
D 0.41 0.55
E 0.35 0.50
F 5°
G 1.40 1.14
H 1.53
K 12.70
-
Dimensi |
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MPSA44 | Motorola Semiconductors |
High Voltage Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSA44/D
High Voltage Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPSA44
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 400 5 |
[1]  [2]
Последние обновления
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2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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