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MPS6515 даташитФункция этой детали – «NPN SilICon Planar Epitaxial Transistors». |
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Номер в каталоге | Производители | Описание | |
MPS6515 | New Jersey Semiconductor |
Trans GP BJT NPN 25V 0.1A 3-Pin TO-92 Box |
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MPS6515 | Motorola Semiconductors |
AMPLIFIER TRANSISTOR MAXIMUM RATINGS
NPN MPS6512
thru
MPS6515
PNP
Rating
Symbol
Collector-Emitter Voltage
MPS6512, MPS6513 MPS6514, MPS6515 MPS6516thru MPS6518 MPS6519
vCEO
Collector-Base Voltage.
MPS6512thru MPS6515 MPS6516 thru MPS6518 MPS6519
VCBO
MPS6516
thru
MPS6519
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation @l/ = 25°C Derate above 25°C
@Total Device Dissipation Trj = 25°C
Derate above 25°C
VEBO
ic
PD
Pd
CASE 29-02. STYLE 1
TO-92 (TO-226AA)
AMPLIFIER TRANSISTOR
Operating and Storage Ju |
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MPS6515 | Micro Electronics |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
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MPS6515 | KSL Microdevices |
(MPSxxxx) General Purpose Amplifiers and Medium-Speed Switches w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
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MPS6515 | Fairchild Semiconductor |
NPN General Purpose Amplifier MPS6515/MMBT6515
MPS6515/MMBT6515
NPN General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.
1 1. Emitter 2. Base 3. Collector TO-92 3 2 SOT-23 1 Mark: 3J 1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and St |
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MPS6515 | Central Semiconductor |
COMPLEMENTARY SILICON TRANSISTORS DATA SHEET
NPN MPS6512 MPS6513 MPS6514 MPS6515
PNP MPS6516 MPS6517 MPS6518 MPS6519
COMPLEMENTARY SILICON TRANSISTORS
JEDEC TO-92 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Opera |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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