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MPS5179 даташит

Функция этой детали – «High Frequency Transistor NPN SilICon».



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Номер в каталоге Производители Описание PDF
MPS5179 Zetex Semiconductors
Zetex Semiconductors
  NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR

NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSUE 2 – FEB 1994 FEATURES * HIGH fT=900MHz MIN * MAX CAPACITANCE=1pF * LOW NOISE 5dB APPLICATIONS * CORDLESS TELEPHONES * KEYLESS ENTRY SYSTEMS * WIDEBAND INSTRUMENTATION AMPLIFIERS * TELEMETRY * WIRELESS LANS * REMOTE METERING * TAGGING MPS5179 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Te
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MPS5179 Samsung semiconductor
Samsung semiconductor
  NPN (HIGH FREQUENCY TRANSISTOR)

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MPS5179 ON Semiconductor
ON Semiconductor
  High Frequency Transistor NPN Silicon

MPS5179 Preferred Device High Frequency Transistor NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD PD Tstg Value 12 20 2.5 50 200 1.14 300 1.71 −55 to +150 Unit Vdc Vdc Vdc mAdc W mW/°C
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MPS5179 Motorola Semiconductors
Motorola Semiconductors
  High Frequency Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS5179/D High Frequency Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS5179 Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD PD Tstg Value 12 20 2
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MPS5179 Fairchild Semiconductor
Fairchild Semiconductor
  NPN RF Transistor

MPS5179 / MMBT5179 / PN5179 Discrete POWER & Signal Technologies MPS5179 MMBT5179 C PN5179 E C B TO-92 E SOT-23 Mark: 3C B C E TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage C
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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