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MPS5179 даташитФункция этой детали – «High Frequency Transistor NPN SilICon». |
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Номер в каталоге | Производители | Описание | |
MPS5179 | Zetex Semiconductors |
NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR
ISSUE 2 FEB 1994 FEATURES * HIGH fT=900MHz MIN * MAX CAPACITANCE=1pF * LOW NOISE 5dB APPLICATIONS * CORDLESS TELEPHONES * KEYLESS ENTRY SYSTEMS * WIDEBAND INSTRUMENTATION AMPLIFIERS * TELEMETRY * WIRELESS LANS * REMOTE METERING * TAGGING
MPS5179
C B
E
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Te |
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MPS5179 | Samsung semiconductor |
NPN (HIGH FREQUENCY TRANSISTOR) |
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MPS5179 | ON Semiconductor |
High Frequency Transistor NPN Silicon
MPS5179
Preferred Device
High Frequency Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD PD Tstg Value 12 20 2.5 50 200 1.14 300 1.71 −55 to +150 Unit Vdc Vdc Vdc mAdc W mW/°C |
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MPS5179 | Motorola Semiconductors |
High Frequency Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS5179/D
High Frequency Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS5179
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD PD Tstg Value 12 20 2 |
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MPS5179 | Fairchild Semiconductor |
NPN RF Transistor
MPS5179 / MMBT5179 / PN5179
Discrete POWER & Signal Technologies
MPS5179
MMBT5179
C
PN5179
E C B
TO-92
E
SOT-23
Mark: 3C
B
C
E
TO-92
B
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage C |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |