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MN130S даташитФункция этой детали – «SilICon Power Transistor». |
Показать результаты поиска |
| Номер в каталоге | Производители | Описание | |
| MN130S |  Sanken |
silicon power transistor 1. Scope MN130S The present specifications shall apply to Sanken silicon power transistor type MN130S.
2.
( 25 ) Absolute Maximum Ratings (Ta=25 )
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
Rating 200 140 6 10 4 130 (Tc=25 ) 150 -55 150
Unit V V V A A W
3.
( 25 ) Electrical Characteristics (Ta=25 ) Limits TYP MAX 10 10 140 70 180 0.5 |
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Это результат поиска, начинающийся с "130S", "MN1" |
| Номер в каталоге | Производители | Описание | |
| 2SJ130S |  Hitachi Semiconductor |
Silicon P-Channel MOS FET 2SJ130(L), 2SJ130(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators
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| 30KP130S |  LGE |
Glass passivated junction chip 30KP33S,SC SERIES
30K Watts TVS Diodes
VR : 33 - 400 Volts PPK : 30,000 Watts
Features
Glass passivated junction chip Excellent Clamping Capability Fast Response Time Low Leakage Current Pb / RoHS Free
DO-204AR
0.251 (6.40) 0.244 (6.20)
1.00 (25.4) MIN.
Mechan |
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| 30KP130SA | LGE |
Glass passivated junction chip 30KP33S,SC SERIES
30K Watts TVS Diodes
VR : 33 - 400 Volts PPK : 30,000 Watts
Features
Glass passivated junction chip Excellent Clamping Capability Fast Response Time Low Leakage Current Pb / RoHS Free
DO-204AR
0.251 (6.40) 0.244 (6.20)
1.00 (25.4) MIN.
Mechan |
|
| 30KP130SC | LGE |
Glass passivated junction chip 30KP33S,SC SERIES
30K Watts TVS Diodes
VR : 33 - 400 Volts PPK : 30,000 Watts
Features
Glass passivated junction chip Excellent Clamping Capability Fast Response Time Low Leakage Current Pb / RoHS Free
DO-204AR
0.251 (6.40) 0.244 (6.20)
1.00 (25.4) MIN.
Mechan |
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| 30KP130SCA | LGE |
Glass passivated junction chip 30KP33S,SC SERIES
30K Watts TVS Diodes
VR : 33 - 400 Volts PPK : 30,000 Watts
Features
Glass passivated junction chip Excellent Clamping Capability Fast Response Time Low Leakage Current Pb / RoHS Free
DO-204AR
0.251 (6.40) 0.244 (6.20)
1.00 (25.4) MIN.
Mechan |
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| CMPWR130S |  California Micro Devices Corp |
300mA SMARTOR Regulator with V Drive |
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[1]
Последние обновления
| Номер в каталоге | Производители | Описание | |
| 2N3904 |  Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
| NE555 |  ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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