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MMBTH10 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
17 MMBTH10   NPN Silicon VHF/UHF Transistor

MMBTH10 NPN Silicon VHF/UHF Transistor P b Lead(Pb)-Free BASE COLLECTOR 3 1 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 25 30 3.0 50 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board(1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD R θJA TJ, Tstg V
Weitron Technology
Weitron Technology
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16 MMBTH10   RF TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD MMBTH10 RF TRANSISTOR „ DESCRIPTION NPN SILICON TRANSISTOR The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. *Pb-free plating product number: MMBTH10L „ ORDERING INFORMATION Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel Order Number Normal Lead Free Plating MMBTH10-x-AE3-C-R MMBTH10L-x-AE3-C-R „ MARKING 3E www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R
UTC
UTC
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15 MMBTH10   NPN Epitaxial Planar Transistor

Elektronische Bauelemente MMBTH10 50 mA, 30 V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free DESCRIPTION The MMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. FEATURES VHF/UHF Transistor PACKAGING INFORMATION Weight: 0.0078g (Approximately) MARKING CODE 3EM 1 Base Collector 3 2 Emitter SOT-23 A L 3 Top View CB 12 KE 3 1 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89
SeCoS
SeCoS
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14 MMBTH10   NPN HIGH FREQUENCY TRANSISTOR

MMBTH10 NPN HIGH FREQUENCY TRANSISTOR This device is designed for VHF/UHF amplifier applications and high output VHF oscillators. 3 COLLECTOR SPECIFICATION FEATURES Guaranteed Minimum Current Gain-Bandwidth Product of 650 MHz Collector Currents up to 50mA Industry Standard SOT-23 Package APPLICATIONS Low Noise VHF/UHF Amplifiers and Mixers Low Frequency Drift, High Output Oscillators 1 BASE 2 EMITTER 1 2 SOT-23 3 MAXIMUM RATINGS TJ= 25°C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Vol
Pan Jit International
Pan Jit International
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13 MMBTH10   VHF/UHF TRANSISTOR

MMBTH10 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) VHF/UHF TRANSISTOR NPN SILICON Refer to MPSH10 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol v CEO v CBO v EBO THERMAL CHARACTERISTICS Characteristic "Total Device Dissipation, T^ = 25°C Derate above 25°C Symbol PD Storage Temperature TStQ "Thermal Resistance Junction to Ambient r sja "Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
Motorola
Motorola
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12 MMBTH10   NPN VHF/UHF Transistors

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTH10 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators • High current gain bandwidth product • Marking Code: 3EM • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Maximum Ratings Symbol VCEO VCBO
MCC
MCC
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11 MMBTH10   Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z High transition frequency. z Power dissipation.(PC=350mW) Pb Lead-free APPLICATIONS z VHF/UHF Transistor. Production specification MMBTH10 ORDERING INFORMATION Type No. Marking MMBTH10 3EM SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Di
Galaxy Electrical
Galaxy Electrical
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10 MMBTH10   NPN RF Transistor

MPSH10 / MMBTH10 Discrete POWER & Signal Technologies MPSH10 MMBTH10 C E C E TO-92 B SOT-23 Mark: 3E B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector C
Fairchild
Fairchild
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Номер в каталоге Описание Производители PDF
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Fairchild Semiconductor
Fairchild Semiconductor
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HYDIS
HYDIS
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